Graded-Gap TechnologyFormattingof High-Speed GaAs – TransistorStructuresastheBasisforModern of Large Integrated Circuits
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Фізика і хімія твердого тіла
سال: 2015
ISSN: 2309-8589,1729-4428
DOI: 10.15330/pcss.16.1.221-229